Tel.: 8615989623158
E-mail: sales@grandetop.com
Tel.: 8615989623158
E-mail: sales@grandetop.com
MBE Principles
Molecular beam epitaxy (MBE) is a highly controllable epitaxial growth technology under ultra-high and ultra-clean vacuum conditions. It epitaxially grows thin film materials on a heated crystal substrate through the interaction between atomic or molecular beams provided by multiple high-purity beam sources, and its control accuracy can reach the single atomic layer scale.
MBE Application
Communication
Lasers
IR Detectors
Microwave & Terahertz
Science
Emerging Materials
Core components
We have independent intellectual property rights for core technologies and have achieved localization of key core components. We can provide comprehensive support for key components such as beam source furnaces, substrate racks, sputtering ion pumps, substrate degassing tables, linear manipulators, high-energy electron diffractometers and vortex dry pumps.
Process support
We have professional process team support covering various technical fields such as process growth and material testing, and have in-depth cooperation with the top domestic MBE scientist team. We can provide mature process packages with stable processes and high repeatability of samples of the same process.
Technical Services
We have an experienced professional service team, industry-leading key components, consumables spare parts base and testing platform, and can provide laboratory relocation, equipment cleaning and repair and other personalized services, preventive maintenance and regular training guidance in a high-quality and efficient manner.
Customized products
We work closely with our customers to innovate together. Our customized MBE systems can meet our customers’ diverse scientific research and production needs. We continuously accumulate R&D and application experience in actual application environments to achieve technological advancement.
Series products
MBE equipment covers different needs in the fields of scientific research and production in terms of substrate size and quantity. In terms of material systems, it has completed the serial layout of mainstream systems such as IV compounds, II-VI compounds, IV compounds, oxides, and nitrides.
Technical parameters:
| MBE Model | MBE 30 | MBE 45 | MBE60 | MBE90 | MBE110 | MBE140 |
| Substrate | 2 inches | 3 inches | 4 inches/3 x 2 inches | 10 inches/4 x 4,7 x 3 inches | 1 2 inches/2 x 6,7 x 4 inches | 2 0 inches/7 x 6,14 x 4 inches |
| Substrate heating | 800°C | 800°C | 105 0°C | 1000 °C | 10 00°C | 105 0°C |
| Number of cavities | 3 | 3 | 3 | 4~5 | 4~5 | 5~6 |
| Applied Materials | I II -V, I I -V Group I , silicon germanium | Group III - V, III - V I , oxides | Group III - V, III - V I , oxides | Group III - V, III - V I , oxides | I II -V, I I -V Group I , silicon germanium | Groups I II -V, I I -VI |
| Online detection | Beam, RGA,RHEED | Beam, crystal, RGA,RHEED | Beam, crystal, RGA,RHEED | Beam, crystal, RGA,RHEED | Beam, RGA,RHEED | Beam, RGA,RHEED |
| Number of beam sources | 8 | 10 | 12 | 12 | 11 | 10 |
| Beam source baffle | Rotary | Flip | Flip | Flip | Swing | Swing |
| Beam source temperature | 1500±0.1°C | 1500±0.1°C | 1 4 00±0.1°C | 1 4 00±0.1°C | 1 4 00±0.1°C | 1 4 00±0.1°C |
| Film thickness non-uniformity | ≤±2% | ≤±2% | ≤±1.5% | ≤±2% | ≤±2% | ≤±2% |
