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Molecular Beam Epitaxy Parameters
  • Molecular Beam Epitaxy Parameters
Molecular Beam Epitaxy Parameters

Molecular Beam Epitaxy Parameters

MBE Principles

Molecular beam epitaxy (MBE) is a highly controllable epitaxial growth technology under ultra-high and ultra-clean vacuum conditions. It epitaxially grows thin film materials on a heated crystal substrate through the interaction between atomic or molecular beams provided by multiple high-purity beam sources, and its control accuracy can reach the single atomic layer scale.

Product Details

MBE Application
Communication

Lasers

IR Detectors 

Microwave & Terahertz

Science

Emerging Materials

Core components

We have independent intellectual property rights for core technologies and have achieved localization of key core components. We can provide comprehensive support for key components such as beam source furnaces, substrate racks, sputtering ion pumps, substrate degassing tables, linear manipulators, high-energy electron diffractometers and vortex dry pumps.

Process support

We have professional process team support covering various technical fields such as process growth and material testing, and have in-depth cooperation with the top domestic MBE scientist team. We can provide mature process packages with stable processes and high repeatability of samples of the same process.

Technical Services

We have an experienced professional service team, industry-leading key components, consumables spare parts base and testing platform, and can provide laboratory relocation, equipment cleaning and repair and other personalized services, preventive maintenance and regular training guidance in a high-quality and efficient manner.

Customized products

We work closely with our customers to innovate together. Our customized MBE systems can meet our customers’ diverse scientific research and production needs. We continuously accumulate R&D and application experience in actual application environments to achieve technological advancement.

Series products

MBE equipment covers different needs in the fields of scientific research and production in terms of substrate size and quantity. In terms of material systems, it has completed the serial layout of mainstream systems such as IV compounds, II-VI compounds, IV compounds, oxides, and nitrides.

Technical parameters:

MBE ModelMBE 30MBE 45MBE60MBE90MBE110MBE140
Substrate2 inches3 inches4 inches/3 x 2 inches10 inches/4 x 4,7 x 3 inches1 2 inches/2 x 6,7 x 4 inches2 0 inches/7 x 6,14 x 4 inches
Substrate heating800°C800°C105 0°C1000 °C10 00°C105 0°C
Number of cavities3334~54~55~6
Applied MaterialsI II -V, I I -V Group I , silicon germaniumGroup III - V, III - V I , oxidesGroup III - V, III - V I , oxidesGroup III - V, III - V I , oxidesI II -V, I I -V Group I , silicon germaniumGroups I II -V, I I -VI
Online detectionBeam, RGA,RHEEDBeam, crystal, RGA,RHEEDBeam, crystal, RGA,RHEEDBeam, crystal, RGA,RHEEDBeam, RGA,RHEEDBeam, RGA,RHEED
Number of beam sources81012121110
Beam source baffleRotaryFlipFlipFlipSwingSwing
Beam source temperature1500±0.1°C1500±0.1°C1 4 00±0.1°C1 4 00±0.1°C1 4 00±0.1°C1 4 00±0.1°C
Film thickness non-uniformity≤±2%≤±2%≤±1.5%≤±2%≤±2%≤±2%