Tel.: 8615989623158
E-mail: sales@grandetop.com
Tel.: 8615989623158
E-mail: sales@grandetop.com
The system is used for the preparation of nano-scale single-layer and multi-layer functional films, hard films, metal films, semiconductor films, dielectric films, ferromagnetic films and magnetic films, etc. It can be widely used in the fields of semiconductors, microelectronics and new materials.
Composition
The system is mainly composed of a sputtering vacuum chamber, a magnetron sputtering target, a substrate water-cooling and heating revolution table, a Kaufman ion gun, a four-station rotating target, a working gas circuit, an exhaust system, a vacuum measurement, an electronic control system and an installation machine.
Technical parameters:
| Model | MIB-560 | |
| Vacuum Chamber | Vertical cylindrical, size Ф550x450mm | |
| Vacuum system configuration | Compound molecular pump, mechanical pump, gate valve | |
| Ultimate pressure | ≤6.67x10 -5 Pa (after baking and degassing) | |
| Restore vacuum time | 40 minutes to reach 6.6x10 -4 Pa (short exposure to the atmosphere and filling with dry nitrogen before starting to pump out) | |
| Substrate water cooling and heating revolution table | Substrate structure | Designed 6 workstations, one of which is equipped with a heating furnace, and the rest are water-cooled substrate tables |
| Sample size | Ф30mm, can hold 6 pieces | |
| Exercise | 0～360° rotation | |
| heating | Substrate heating maximum temperature 600℃±1℃ | |
| Substrate negative bias | -200V | |
| Magnetron target assembly | 4 sets of permanent magnetic targets; target size 60mm (one of them can sputter ferromagnetic materials); each target is compatible with RF sputtering and DC sputtering; the distance between the target and the sample is adjustable from 40 to 80mm | |
| Four-position rotating target assembly | Target size 70x70mm | |
| Main sputtering ion gun | Lead-out grid diameter Ф30mm;Ion beam energy 0.4～2.0Kev continuously adjustable; ion current density 1～5mA/ cm2 | |
| Ion gun for assisted deposition | Extraction grid diameter Ф30mm; ion beam energy 0.4～1.5Kev continuously adjustable ion current density 1～3mA/ cm2 | |
| Gas system | Mass Flow Controller 3-way | |
| Computer control system | Control target baffle, four-station target rotation, sample revolution, sample baffle, sample temperature control, etc. | |
| Equipment area | Host | 1300x850mm 2 |
| Electric control cabinet | 700x700mm 2 (two) | |
