Tel.: 8615989623158
E-mail: sales@grandetop.com
Tel.: 8615989623158
E-mail: sales@grandetop.com
The equipment consists of vacuum chamber (epitaxial chamber, sample injection chamber), sample transfer mechanism, sample rack, rotating target table, vacuum exhaust, vacuum measurement, electrical control, gas distribution, computer control and other parts.
Application
The equipment is used to grow optical crystals, ferroelectrics, ferromagnets, superconductors and organic compound thin film materials, especially suitable for growing complex layered superlattice thin film materials with high melting points, multiple elements and gas elements. It is widely used in colleges and universities, scientific research institutes for scientific research and small batch preparation of thin film materials.
Technical parameters:
| Model | LMBE-450 | |
| Technical indicators | ||
| Main vacuum chamber | Spherical structure, size Ф450mm | |
| Sample injection room | Cylindrical horizontal structure, size Ф150x300mm | |
| Vacuum system configuration | Main vacuum chamber | Mechanical pumps, molecular pumps, ion pumps, sublimation pumps, valves |
| Sample injection room | Mechanical pumps, molecular pumps, valves | |
| Ultimate pressure | Main vacuum chamber | ≤5.0x10 -8 Pa (after baking and degassing) |
| Sample injection room | ≤5.0x10 -5 Pa (after baking and degassing) | |
| Restore vacuum time | Main vacuum chamber | 5.0x10 -3 Pa can be reached in 20 minutes (after short-term exposure to the atmosphere and filling with dry nitrogen, the air is then pumped out) |
| Sample injection room | 5.0x10 -3 Pa can be reached in 20 minutes (after short-term exposure to the atmosphere and filling with dry nitrogen, the air is then pumped out) | |
| Rotating target platform | The maximum size of the target is 2 inches. 4 targets can be loaded at a time, and the target can be rotated. Each target can rotate at a speed of 5 to 60 rpm. | |
| Substrate heating stage | Sample size | Ф51mm |
| Exercise | The substrate can rotate continuously at a speed of 5 to 60 rpm | |
| heating | Substrate heating maximum temperature 800℃±1℃ | |
| Gas system | Mass flow controller 1 way all metal angle valve 1 way | |
| Optional Parts | Differential high energy electron diffractometer(RHEED) | High energy power supply: maximum energy 25KV, maximum beam current 100μA |
| RHEED intensity oscillation, growth rate monitoring system | It is mainly composed of camera, hardware, computer control software package, etc. It can realize ≥20 cycles of film oscillation curve | |
| Laser beam scanning device | 2D scanning mechanical stage, performs scanning with two degrees of freedom. | |
| Computer control system | Control includes target rotation, target rotation, sample rotation, sample temperature control, laser beam scanning, etc. | |
| Quadrupole mass spectrometer | Mass number: 1~100 | |
| Equipment area | Host | 1300x850mm 2 |
| Electric control cabinet | 700x700mm 2 (two) | |
LMBE-400 Molecular Beam Epitaxy Equipment
Purpose 1
The system is mainly composed of epitaxial growth chamber, preparation chamber, rapid sampling system (sampling chamber), vacuum acquisition system, sampling system, transmission guide rail, high-energy electron diffraction system, electrical control system, computer control system, etc.
Purpose 2
The system is used for the preparation of new thin film materials such as nano-scale single-layer and multi-layer functional films, hard films, metal films, semiconductor films, dielectric films, etc. It can be widely used in the research and small-batch preparation of thin film materials in colleges and universities and scientific research institutes.
Technical parameters:
| Model | LMBE-400 | |
| Technical indicators | ||
| Main vacuum chamber | Dimensions Ф450x765mm (H) | |
| Sample injection room | Size Ф300x900mm (L ) | |
| Vacuum system configuration | Main vacuum chamber | Compound molecular pump, mechanical pump, ion pump, sublimation pump, manual gate valve |
| Sample injection room | Mechanical pumps, molecular pumps, valves | |
| Ultimate pressure | Main vacuum chamber | ≤5.0x10 -8 Pa (after baking and degassing) |
| Sample injection room | ≤1.0x10- 6 Pa (after baking and degassing) | |
| Restore vacuum time | Main vacuum chamber | 35 minutes to reach 6.6x10 -4 Pa (short exposure to the atmosphere and filling with dry nitrogen before starting to pump) |
| Sample injection room | 35 minutes to reach 6.6x10 -3 Pa (short exposure to the atmosphere and filling with dry nitrogen before starting to pump) | |
| Beam source furnace | Number of beam source furnaces: 8, with water cooling structure, source furnace heating temperature 1300℃ temperature control accuracy ±1 degree, temperature controller imported from Japan | |
| Differential High Energy Electron Diffractometer (RHEED) | High energy power supply: maximum energy 25KV, maximum beam current 100μAFluorescent screen: 1 observation window; baffle: 1 set; black tube for photography: 1 set | |
| Preparation room turntable | Sample size | Ф3 inches |
| Exercise | The substrate can rotate continuously at a speed of 5 to 60 rpm | |
| heating | Substrate heating maximum temperature 800℃±1℃ | |
| Epitaxial growth chamber turntable | Sample size | Ф3 inches |
| Exercise | The substrate can rotate continuously at a speed of 5 to 60 rpm | |
| heating | Substrate heating maximum temperature 800℃±1℃ | |
| Adjust the angle | Manual left 65°, right 25° | |
| Gas system | Mass flow controller 2-way, all metal angle valve | |
| Computer control system | Pumping, beam source furnace baffle switch, sample rotation. | |
| Equipment area | Host | 1800x1400mm 2 |
| Electric control cabinet | 700x700mm 2 (two) | |
