ALD Single Atomic Layer Film Growth Equipment

Atomic layer deposition (ALD) is a thin film preparation method that can precisely control the thickness of the film layer. It can achieve the deposition of metals, oxides, carbon (nitrogen, sulfur, silicon) compounds, various semiconductor materials and superconducting materials on the substrate.

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Product Details

The equipment is mainly used for the growth of transparent conductive films represented by zinc oxide (ZnO) and dielectric material films such as aluminum oxide (Al2O3). The equipment is simple and reliable to operate, and the experimental parameters are flexible and variable, which can meet the scientific research needs of universities and research institutes for uniform coating of thin film materials and complex surfaces.

Technical Parameters:

Vacuum Chamber	Vacuum chamber	Argon arc welding stainless steel material, flip-up cover structure
Vacuum Chamber	Bottom exhaust port	Connecting a vacuum dry pump
Ultimate pressure		5Pa
Overall vacuum leak rate		＜10^-8Pa.l/s
Substrate heater		External heating system, continuously adjustable from room temperature to 450℃
Substrate size		Ф50～100mm
Film thickness uniformity		For ZnO films of Ф wafers, the film thickness uniformity is less than ±1%
ALD working gas delivery control gas line	Liquid source gas line	Can be customized according to customer requirements
ALD working gas delivery control gas line	Gaseous source gas path	Can be customized according to customer requirements
Vacuum exhaust system	Double-sided oil-free dry vacuum pump	1 unit
Vacuum exhaust system	Vacuum line	1 set
Vacuum monitoring	Pirani resistance gauge	Measuring range: 1.0x10 ⁵Pa～3.0x10 ^-2Pa
Data collection and recording and human-computer interaction interface		1 set
Electrical control system	Sample heating power supply	1 set
	Solenoid reversing valve	1 set
	Total control power	1 set
Installation of the machine		Steel welding, quick-release cover, casters can be fixed or moved
Equipment area		600x600x1200mm